On the use of dielectric films in temperature measurements: application to the realization of capacitive thermometers for temperatures <5 K

D Boutard-Gabillet , P Aranda (1) , F Ladieu (2, 3) , P Pari (2) , M Rotter

1 ICMM - Instituto de Ciencia de Materiales de Madrid
2 SPEC - UMR3680 - Service de physique de l'état condensé
3 SPHYNX - Systèmes Physiques Hors-équilibre, hYdrodynamique, éNergie et compleXes

The paper deals with the first results obtained on the properties of films, deposited by PACVD to be used as dielectric in capacitive thermometers. The composition (Si, O, C, H) and bond distribution are characterized, by ion beam analysis and infrared spectrometry, versus the plasma precursor: TEOS and mixtures TEOS+He. This is shown to play mainly a role on the carbon bonding distribution (CH bonds tends to be replaced by CO ones). In parallel the measurements of C ( T ) for two capacitors show that composition and bond distribution are as well leading parameters for the dielectric properties of our `tentative thermometers.

Domaines: Physique [physics]

D Boutard-Gabillet, P Aranda, F Ladieu, P Pari, M Rotter. On the use of dielectric films in temperature measurements: application to the realization of capacitive thermometers for temperatures <5 K. Journal of Non-Crystalline Solids, 1999, 245 (1-3), pp.27 - 32. ⟨10.1016/S0022-3093(98)00869-2⟩. ⟨hal-01397078⟩