A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous (1, 2) , Maher Soueidan (1) , Gabriel Ferro (3) , Mihai Lazar (1, 2) , Berangère Toury (3) , Marie-France Beaufort (4) , Jean François Barbot (4) , Jose Penuelas (5) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 LMI - Laboratoire des Multimatériaux et Interfaces
4 PPrime [Poitiers] - Institut Pprime [UPR 3346]
5 INL - H&N - INL - Hétéroepitaxie et Nanostructures

In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Annealing (RTA) furnace. Structural analyses reveal the formation of epitaxial hexagonal Ti3SiC2 (0001) oriented. Elemental analyses show that high amount of Al and O elements are present inside the deposit. Obviously, the formation of Ti3SiC2 is accompanied by parasitic Al oxide, probably due to some unwanted oxygen residual in the RTA chamber. By using proper backing steps before the annealing, the deposit is not anymore composed of only Ti3SiC2 but accompanied with other compounds (Al3Ti, and Al). On the oxide-free sample, the specific contact resistance ρc of the Ti3SiC2 based contact on p-type 4H-SiC (having Na= 2×1019 cm-3) was measured to be as low as 6×10-5 Ω.cm2.

Mots clés: Ti-Al alloy; Ti3SiC2; MAX phase; p-type 4H-SiC; ohmic-contact

Domaines: Matériaux

Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, et al.. A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing. Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩. ⟨hal-01391858⟩