The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Mihai Lazar (1) , Farah Laariedh (1) , Pierre Cremillieu (2) , Dominique Planson (1) , Jean-Louis Leclercq (3)

1 EE - Ampère, Département Energie Electrique
2 INL - Nanolyon - INL - Plateforme Technologique Nanolyon
3 INL - Photonique - INL - Nanophotonique

A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H–SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect.

Mots clés: SIMS; 4H–SiC; 4H-SiC; lateral JFET; ion implantation; channeling effect; Monte-Carlo simulations

Domaines: Energie électrique

Mihai Lazar, Farah Laariedh, Pierre Cremillieu, Dominique Planson, Jean-Louis Leclercq. The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩. ⟨hal-01391844⟩