Skip to Main content Skip to Navigation
Journal articles

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

Abstract : In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.
Document type :
Journal articles
Complete list of metadata
Contributor : Publications Ampère <>
Submitted on : Thursday, November 3, 2016 - 8:42:31 PM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM

Links full text



F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Improvements in Realizing 4H-SiC Thermal Neutron Detectors. EPJ Web of Conferences, EDP Sciences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩. ⟨hal-01391841⟩



Record views