Improvements in Realizing 4H-SiC Thermal Neutron Detectors

F. Issa (1) , V. Vervisch (1) , L. Ottaviani (1) , D. Szalkai (2) , L. Vermeeren (3) , A. Lyoussi (4) , A. Kuznetsov (5) , Mihai Lazar (6) , A. Klix (2) , Olivier Palais (1) , A. Hallén

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 KIT - Karlsruhe Institute of Technology
3 SCK-CEN - Centre d'Etude de l'Energie Nucléaire
4 DER - Département Etude des Réacteurs
5 UiO - University of Oslo
6 EE - Ampère, Département Energie Electrique

In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Domaines: Energie électrique

F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Improvements in Realizing 4H-SiC Thermal Neutron Detectors. EPJ Web of Conferences, 2016, 106, ⟨10.1051/epjconf/201610605004⟩. ⟨hal-01391841⟩