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Silicon Photonics Based on Ge/SiGe Quantum Well Structures

Abstract : Recent advances in the theoretical and experimental studies of Ge/SiGe quantum wells structures will be presented with a focus on optical telecommunication applications. Firstly, high-speed stand-alone Ge/SiGe QW electro-absorption modulators and photodetectors will be reported. It will be followed by the presentation of different methods for engineering Ge/SiGe QW to tune the operating wavelength to 1.3 µm. Then the demonstration of a strong electro-refraction Ge/SiGe QW will be reported. This effect could be used to achieve optical modulation but requires the embedding of the QWs in a Mach-Zehnder interferometer. Finally it will be shown that these active devices can be combined with advanced passive structures using Ge-rich SiGe virtual substrate on graded buffer as a waveguide.
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https://hal.archives-ouvertes.fr/hal-01388130
Contributor : Delphine Marris-Morini <>
Submitted on : Wednesday, October 26, 2016 - 3:13:48 PM
Last modification on : Friday, April 10, 2020 - 5:27:02 PM

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D Marris-Morini, Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Mumtahina Rahman, et al.. Silicon Photonics Based on Ge/SiGe Quantum Well Structures. 18th International Conference on transparent Optical Networks (ICTON 2016), Jul 2016, Trente, Italy. ⟨10.1109/ICTON.2016.7550395⟩. ⟨hal-01388130⟩

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