Silicon Photonics Based on Ge/SiGe Quantum Well Structures

D M Marris-Morini (1) , Vladyslav Vakarin (1) , Papichaya Chaisakul (1) , Jacopo Frigerio (2) , Mumtahina Rahman (1) , Joan-Manel Ramírez (1) , Mohamed-Said Rouifed (1) , Daniel Chrastina (2) , Xavier Le Roux (1) , Giovanni Isella (2) , Laurent Vivien (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
2 POLIMI - Politecnico di Milano [Milan]

Recent advances in the theoretical and experimental studies of Ge/SiGe quantum wells structures will be presented with a focus on optical telecommunication applications. Firstly, high-speed stand-alone Ge/SiGe QW electro-absorption modulators and photodetectors will be reported. It will be followed by the presentation of different methods for engineering Ge/SiGe QW to tune the operating wavelength to 1.3 µm. Then the demonstration of a strong electro-refraction Ge/SiGe QW will be reported. This effect could be used to achieve optical modulation but requires the embedding of the QWs in a Mach-Zehnder interferometer. Finally it will be shown that these active devices can be combined with advanced passive structures using Ge-rich SiGe virtual substrate on graded buffer as a waveguide.

Domaines: Optique / photonique

D M Marris-Morini, Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Mumtahina Rahman, et al.. Silicon Photonics Based on Ge/SiGe Quantum Well Structures. 18th International Conference on transparent Optical Networks (ICTON 2016), Jul 2016, Trente, Italy. ⟨10.1109/ICTON.2016.7550395⟩. ⟨hal-01388130⟩