Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

J. Piñero (1) , D. Araujo (1) , A. Traoré (2) , G. Chicot (2) , A. Maréchal (2) , P. Muret (2) , M. P. Alegre (3) , M. P. Villar (1) , Julien Pernot (2)

1 Dpto. Ciencias de los Materiales, Universidad de Cadiz, Spain
2 NEEL - SC2G - Semi-conducteurs à large bande interdite
3 Dpto Ciencia de los Materiales

Domaines: Physique [physics]

J. Piñero, D. Araujo, A. Traoré, G. Chicot, A. Maréchal, et al.. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior. physica status solidi (a), 2014, 211 (10), pp.2367 - 2371. ⟨10.1002/pssa.201431178⟩. ⟨hal-01379124⟩