Improving the thermal management of power GaN devices

Chenjiang Yu (1) , Cyril Buttay (2) , Eric Labouré (1)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 EE - Ampère, Département Energie Electrique

GaN transistors require extremely short connexions (parasitic inductance of a few hundred of picohenries) to remain efficient, and yet one should provide them with electrical isolation and low thermal resistance to a heatsink. In this presentation, we compare a regular mounting (flip-chip mounting on a PCB), the same mounting, but on a ceramic substrate, and an alternative mounting where the die is cooled through its backside, and the electrical interconnects use a flexible PCB. These three structures are compared using simulation and experiments, and it is found that the ceramic substrate reduces the total thermal resistance by a factor of 3 (5 K/W or less vs 15 K/W for a PCB substrate).

Domaines: Electronique

Chenjiang Yu, Cyril Buttay, Eric Labouré. Improving the thermal management of power GaN devices. Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2016, Los Gatos, CA, United States. ⟨hal-01373027⟩