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Improving the thermal management of power GaN devices

Abstract : GaN transistors require extremely short connexions (parasitic inductance of a few hundred of picohenries) to remain efficient, and yet one should provide them with electrical isolation and low thermal resistance to a heatsink. In this presentation, we compare a regular mounting (flip-chip mounting on a PCB), the same mounting, but on a ceramic substrate, and an alternative mounting where the die is cooled through its backside, and the electrical interconnects use a flexible PCB. These three structures are compared using simulation and experiments, and it is found that the ceramic substrate reduces the total thermal resistance by a factor of 3 (5 K/W or less vs 15 K/W for a PCB substrate).
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https://hal.archives-ouvertes.fr/hal-01373027
Contributor : Cyril Buttay <>
Submitted on : Wednesday, September 28, 2016 - 9:49:27 AM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM

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  • HAL Id : hal-01373027, version 1

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Chenjiang Yu, Cyril Buttay, Eric Labouré. Improving the thermal management of power GaN devices. Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2016, Los Gatos, CA, United States. ⟨hal-01373027⟩

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