Influence of free carriers on exciton ground states in quantum wells

A.A. Klochikhin (1, 2) , V. P. Kochereshko (2, 1) , S. Tatarenko (3)

1 A.F. Ioffe Physical-Technical Institute
2 Petersburg Nuclear Physics Institute
3 NEEL - NPSC - Nanophysique et Semiconducteurs

The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework of the random phase approximation. The effects of the exciton-charge-density interaction and the inelastic scattering processes due to the Hartree-Fock electron-electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data available.

Domaines: Physique [physics]

A.A. Klochikhin, V. P. Kochereshko, S. Tatarenko. Influence of free carriers on exciton ground states in quantum wells. Journal of Luminescence, 2014, 154, pp.310-315. ⟨10.1016/j.jlumin.2014.04.039⟩. ⟨hal-01369188⟩