Towards vertical power device 3D packaging on 8-inch wafer

Bastien Letowski (1, 2) , Julie Widiez (1, 2) , Marc Rabarot (1, 2) , William Vandendaele (1, 2) , Bruno Imbert (1, 2) , Nicolas Clément, Jean-Paul Rouger (3) , Jean-Christophe Crébier (3)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 UGA [2016-2019] - Université Grenoble Alpes [2016-2019]
3 G2ELab - Laboratoire de Génie Electrique de Grenoble

This paper presents a wafer-level fabrication process of 3D power module based on 8-inch wafer devices and 8-inch metallic bulk leadframe. This approach relies on the intermixing of the packaging process with the front-end fabrication of the power devices. The specific processes to obtain functional power devices and the metallic bulk leadframe manufacturing are described in the paper as essential key enablers of this packaging approach.

Domaines: Energie électrique

Bastien Letowski, Julie Widiez, Marc Rabarot, William Vandendaele, Bruno Imbert, et al.. Towards vertical power device 3D packaging on 8-inch wafer. Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on, Jun 2016, Prague, Czech Republic. ⟨hal-01362296⟩