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Mn5Ge3C0.6/Ge(111) Schottky contacts tuned by a n-type ultra-shallow doping layer

Abstract : Mn 5 Ge 3 Cxcompound is of great interest for spintronics applications. 10 The various parameters of Au/Mn 5 Ge 3 C 0.6 /Ge(111) and Au/Mn 5 Ge 3 C 0.6 /δ-doped Ge(111) Schottky diodes were measured in the temperature range of 30-300 K by using current-voltage and capacitance-voltage techniques. The Schottky barrier heights and ideality factors were found to be temperature dependent. These anomaly behaviours were explained by Schottky barriers inhomogeneities 15 and interpreted by means of Gaussian distributions model of the Schottky barrier heights. Following this approach we show that the Mn 5 Ge 3 C 0.6 /Ge contact is described with a single Gaussian distribution and a conduction mechanism mainly based on the thermoionic emission. On the other hand the Mn 5 Ge 3 C 0.6 /δ-doped Ge contact is depicted with two Gaussian distributions according to the 20 temperature and a thermionic-field emission process. The differences between the two types of contacts are discussed according to the distinctive features of the growth of heavily doped germanium thin films.
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Submitted on : Tuesday, August 9, 2016 - 9:55:37 AM
Last modification on : Friday, February 14, 2020 - 10:13:52 AM
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Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Vinh Le Thanh, Lisa Michez. Mn5Ge3C0.6/Ge(111) Schottky contacts tuned by a n-type ultra-shallow doping layer. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (35), pp.355101. ⟨10.1088/0022-3727/49/35/355101⟩. ⟨hal-01352715⟩

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