Strain-gradient mapping of semiconductor quantum dots

P.-L de Assis (1) , I Yeo (1, 2) , A Gloppe (3) , H.A. Nguyen (1) , D Tumanov (1) , E Dupont-Ferrier (3) , N.S. Malik (2) , E Dupuy (2) , J Claudon (2) , J.-M Gérard (2) , Alexia Auffèves (1) , O Arcizet (3) , Maxime Richard (1) , J.-Ph Poizat (1)

1 NEEL - NPSC - Nanophysique et Semiconducteurs
2 INAC - Institut Nanosciences et Cryogénie
3 NEEL - NOF - Nano-Optique et Forces

In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such ``quantum microscopes'' have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new method to determine non-destructively the position of randomly distributed semiconductor quantum dots (QDs) deeply embedded in a solid photonic waveguide. By setting the wire in an oscillating motion, we generate large stress gradients across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress [3-5] to infer their positions with an accuracy ranging from +/- 35 nm down to +/-1 nm for close-to-axis QDs.

Mots clés: Quantum dot; imaging; strain

Domaines: Autre [cond-mat.other]

P.-L de Assis, I Yeo, A Gloppe, H.A. Nguyen, D Tumanov, et al.. Strain-gradient mapping of semiconductor quantum dots. 2016. ⟨hal-01347133v1⟩