Évolution des mémoires à semi-conducteurs à accès aléatoire

Philippe Darche 1
1 Regal - Large-Scale Distributed Systems and Applications
LIP6 - Laboratoire d'Informatique de Paris 6, Inria Paris-Rocquencourt
Abstract : This paper aims at tracing the technical developments that led to the current memory. After a brief presentation of the different subsets of this component including the storage array, the control logic and the input-output interface, we detail of each of them the developments. The picture of what might be called the "perfect memory" is then sketched from current research and industry trends. In particular, three electronic components now available, phase change, ferroelectric and magnetoresistive memories, and the respective representatives of which are the PCRAM, FRAM and MRAM are presented.
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Journal articles
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https://hal.sorbonne-universite.fr/hal-01341972
Contributor : Philippe Darche <>
Submitted on : Tuesday, July 5, 2016 - 11:13:19 AM
Last modification on : Thursday, March 21, 2019 - 1:08:24 PM

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  • HAL Id : hal-01341972, version 1

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Philippe Darche. Évolution des mémoires à semi-conducteurs à accès aléatoire. Techniques de l'Ingenieur, Techniques de l'ingénieur, 2017. ⟨hal-01341972⟩

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