Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

Vladimir Neplokh (1) , Agnes Messanvi (1, 2) , Hezhi Zhang (1) , François H. Julien (1) , Andrey Babichev (1) , Joel Eymery (2) , Christophe Durand (2) , Maria Tchernycheva (1)

1 IEF - Institut d'électronique fondamentale
2 NPSC - Nanophysique et Semiconducteurs

We report on the demonstration of substrate-freenanowire /polydimethylsiloxane (PDMS) membrane light emitting diodes (LEDs). Metal-organic vapor phase epitaxy (MOVPE)-grown InGaN/GaN core−shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent ITO contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements the samples were manually bonded using silver paint.The EL spectra measured at different applied voltages demonstrate a blue-shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average Indium content.

Mots clés: Light emitting diodes; Nanowire; Substrate-free devices

Domaines: Optique / photonique; Micro et nanotechnologies/Microélectronique

Vladimir Neplokh, Agnes Messanvi, Hezhi Zhang, François H. Julien, Andrey Babichev, et al.. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes. Nanoscale Research Letters, 2015, ⟨10.1186/s11671-015-1143-5⟩. ⟨hal-01320698⟩