Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

Thierry Bretagnon (1) , Pierre Valvin (1) , Pierre Lefebvre (1) , Bernard Gil (1) , Christian Morhain (2) , Xiaodong Tang (2)

1 GES - Groupe d'étude des semiconducteurs
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using time-resolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.

Mots clés: Quantum wells; Nanomaterials; Semiconducting II–VI materials

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Thierry Bretagnon, Pierre Valvin, Pierre Lefebvre, Bernard Gil, Christian Morhain, et al.. Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells. International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N — ZnO and Related Materials, Jul 2005, Singapour, Singapore. pp.12-15, ⟨10.1016/j.jcrysgro.2005.10.034⟩. ⟨hal-01309928⟩