Growth and magnetic properties of MnAs epitaxied on GaAs(111)B

J. Varalda (1) , A. J. A. De Oliveira , A. Ouerghi (2) , M. Eddrief (2) , M. Marangolo (2) , D. Demaille (2) , Victor H. Etgens (2) , N. Mattoso (1) , D. H. Mosca

1 IMPMC - Institut de minéralogie et de physique des milieux condensés
2 INSP - Institut des Nanosciences de Paris

We have grown MnAs layers on GaAs(111)B by molecular beam epitaxy and studied their surface and epilayer morphology and its interconnection with magnetic properties. The influence of growth variables such as the As/Mn flux ratio and substrate temperature on the properties of the epilayer was studied. These parameters were found to drastically modify the epilayer's characteristics, including its structural quality, and also strongly alter its magnetic properties. A more in-depth knowledge of how these parameters affect epilayers would be extremely useful in tailoring epilayers with specific desirable properties. (c) 2006 American Institute of Physics.

Domaines: Matière Condensée [cond-mat]

J. Varalda, A. J. A. De Oliveira, A. Ouerghi, M. Eddrief, M. Marangolo, et al.. Growth and magnetic properties of MnAs epitaxied on GaAs(111)B. Journal of Applied Physics, 2006, 100 (9), pp.093524. ⟨10.1063/1.2364389⟩. ⟨hal-01293051⟩