Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC

Jurgen von Bardeleben (1) , Jean-Louis Cantin (1) , Ian Vickridge (1) , Yw Song , S Dhar (2) , Lc Feldman , Jr Williams , L Ke , Y Shishkin , Rp Devaty , Wj Choyke

1 INSP - Institut des Nanosciences de Paris
2 Department of Electronic Science

The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO(2) interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000 degrees C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: P(bC) centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

Mots clés: interface defects; P(b) centers; NO treatment; nitridation

Domaines: Matière Condensée [cond-mat]

Jurgen von Bardeleben, Jean-Louis Cantin, Ian Vickridge, Yw Song, S Dhar, et al.. Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.277-280. ⟨hal-01288837⟩