Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies

H Colder , M Morales , R Rizk (1) , Ian Vickridge (2)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
2 INSP - Institut des Nanosciences de Paris

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H-2) at temperatures, T-s, varying from 200° C to 600° C has been used to grow SiC thin films. We report on the influence of T-s on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the C-12(d,p(0))C-13 nuclear reaction and elastic recoil detection analysis (ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As T-s is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Mots clés: sputtering; SiC; ion beam analysis; Raman spectroscopy; IR spectroscopy

Domaines: Matière Condensée [cond-mat]

H Colder, M Morales, R Rizk, Ian Vickridge. Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.287-290. ⟨hal-01288833⟩