Growth and properties of ZnMnTe nanowires

W. Zaleszczyk , E. Janik , A. Presz , W. Szuszkewicz , Jean-François Morhange (1) , P. Dluzewski (2) , S. Kret , H. Kirmse (3) , W. Neumann (3) , E. Dynowska , J. Z. Domagala , W. Caliebe (4) , M. Aleszkiewicz , W. Pacuski , A. Golnik (5) , P. Kossacki (5) , L. T. Baczewski , A. Petroutchik , G. Karczewski (2) , T. Wojtowicz (6)

1 INSP - Institut des Nanosciences de Paris
2 Institute of Physics
3 Institute of Physics, Berlin
4 NSLS - NSLS
5 IFD - Institute of Experimental Physics [Warsaw]
6 SIFCOM - Structure des interfaces et fonctionnalités des couches minces

Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2 mu m and that Mn2+ ions were incorporated into substitutional sites of the ZnTe crystal lattice.

Domaines: Matière Condensée [cond-mat]

W. Zaleszczyk, E. Janik, A. Presz, W. Szuszkewicz, Jean-François Morhange, et al.. Growth and properties of ZnMnTe nanowires. Acta Physica Polonica A, 2007, 112 (2), pp.351-356. ⟨hal-01287893⟩