Enhancement of the electron spin memory by localization on donors in a CdTe quantum well

J. Tribollet (1) , Emmanuel Aubry (2) , G. Karczewski (3) , B. Sermage (4) , Frédéric Bernardot (2) , C. Testelin (2) , M. Chamarro (2)

1 GPS - Groupe de Physique des Solides
2 INSP - Institut des Nanosciences de Paris
3 Institute of Physics
4 CNET Bagneux - France Telecom, Centre National d'Etudes de Télécommunications, Laboratoire de Bagneux

We present easily reproducible experimental conditions giving rise to a long electron spin memory at low temperature. The proposed system consists of an electron localized by a donor potential, and immerged in a quantum well. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation time of electrons localized on iodine donors placed at the middle of a 80 A CdTe quantum well, and we have obtained 20 ns; this spin relaxation time is two orders of magnitude longer than for free electrons in a similar CdTe quantum well [J. Tribollet , Phys. Rev. B 68, 235316 (2003)].

Domaines: Matière Condensée [cond-mat]

J. Tribollet, Emmanuel Aubry, G. Karczewski, B. Sermage, Frédéric Bernardot, et al.. Enhancement of the electron spin memory by localization on donors in a CdTe quantum well. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (20), pp.205304. ⟨10.1103/PhysRevB.75.205304⟩. ⟨hal-01287883⟩