Nature of Tunable Hole g Factors in Quantum Dots

N. Ares (1) , V. N. Golovach (1, 2, 3, 4) , G. Katsaros (1, 2, 5) , Mathieu Stoffel (6) , F. Fournel (7) , L. I. Glazman (8) , O. G. Schmidt (2) , Sylvio Hermann de Franceschi (1)

1 SPSMS - UMR 9001 - Service de Physique Statistique, Magnétisme et Supraconductivité
2 Institute for Integrative Nanosciences
3 Ikerbasque - Basque Foundation for Science
4 CFM - Centro de Fisica de Materiales
5 JKU - University of Linz - Johannes Kepler Universität Linz
6 IJL - Institut Jean Lamour
7 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
8 department of physics, Yale University

We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy-and light-hole wave functions. We show that the relative displacement between the confined heavy-and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

N. Ares, V. N. Golovach, G. Katsaros, Mathieu Stoffel, F. Fournel, et al.. Nature of Tunable Hole g Factors in Quantum Dots. Physical Review Letters, 2013, 110 (4), ⟨10.1103/PhysRevLett.110.046602⟩. ⟨hal-01285177⟩