Combined raman study of InGaAsN from the N-impurity and InGaAs-matrix sides

A. Chafi (1) , O. Pages (2) , A. V. Postnikov (3) , J. Gleize , V. Sallet (4) , E. Rzepka (4) , L. H. Li , Bernard Jusserand (5) , J. C. Harmand

1 LPMD - Laboratoire de Physique des Milieux Denses
2 UPVM - Université Paul Verlaine - Metz
3 LCP-A2MC - Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes
4 GEMAC - Groupe d'Etude de la Matière Condensée
5 INSP - Institut des Nanosciences de Paris

The authors report a Raman study of In0.08Ga0.92As0.98N0.02 covering both N- and InGaAs-related spectral ranges, supported by ab initio and phenomenological modeling of the spectra. The authors argue that the crystal self-organizes at different scales to reduce the N-induced strain. Locally, this is achieved by In-N-Ga-3 configurations, as is well known. Moreover, a long scale organization occurs in the InGaAs matrix, away from N. This is apparent in the over representation of the ``short'' Ga-As bonds from the In-rich region, as compared with random InGaAs. Quantitative insight is derived at the mesoscopic scale from the 1-bond -> 2-phonon ``percolation''-type behavior of the dominant Ga-As species. (c) 2007 American Institute of Physics.

Domaines: Matière Condensée [cond-mat]

A. Chafi, O. Pages, A. V. Postnikov, J. Gleize, V. Sallet, et al.. Combined raman study of InGaAsN from the N-impurity and InGaAs-matrix sides. Applied Physics Letters, 2007, 91 (5), pp.051910. ⟨10.1063/1.2767244⟩. ⟨hal-01284376⟩