Modeling and analysis of low frequency noise in ion-field-effect transistors sensors

Abstract : Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.
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Modeling and Numerical Simulation of Material Science, Scientific Research Publishing Inc, 2014, 4 (3), 〈http://www.scirp.org/journal/PaperDownload.aspx?paperID=47777〉. 〈10.4236/mnsms.2014.43013〉
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Contributeur : Agnès Bussy <>
Soumis le : mercredi 17 février 2016 - 15:37:09
Dernière modification le : jeudi 8 février 2018 - 11:10:27

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Jihen Chermiti, Sawsen Azzouzi, Mounir Ben Ali, Mhamed Trabelsi, Abdelhamid Errachid. Modeling and analysis of low frequency noise in ion-field-effect transistors sensors . Modeling and Numerical Simulation of Material Science, Scientific Research Publishing Inc, 2014, 4 (3), 〈http://www.scirp.org/journal/PaperDownload.aspx?paperID=47777〉. 〈10.4236/mnsms.2014.43013〉. 〈hal-01275511〉

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