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Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

Abstract : All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.
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https://hal.archives-ouvertes.fr/hal-01273660
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Submitted on : Friday, February 12, 2016 - 5:21:15 PM
Last modification on : Saturday, February 27, 2021 - 4:02:05 PM

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F. Wang, G. Liu, S. Rothwell, M. Nevius, Antonio Tejeda, et al.. Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC. Nano Letters, American Chemical Society, 2013, 13 (10), pp.4827-4832. ⟨10.1021/nl402544n⟩. ⟨hal-01273660⟩

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