Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

F. Wang (1) , G. Liu (2) , S. Rothwell (3) , M. Nevius (1) , Antonio Tejeda (4, 5) , A. Taleb-Ibrahimi (4) , L. C. Feldman (2) , P. I. Cohen (3) , E. H. Conrad (1)

1 School of Physics [Atlanta]
2 Rutgers - Rutgers University System
3 ECE - Department of Electrical and Computer Engineering [Minneapolis]
4 SSOLEIL - Synchrotron SOLEIL
5 IJL - Institut Jean Lamour

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

Mots clés: Graphene; graphite; SiC; silicon carbide; graphite thin film; dopants

Domaines: Science des matériaux [cond-mat.mtrl-sci]

F. Wang, G. Liu, S. Rothwell, M. Nevius, Antonio Tejeda, et al.. Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC. Nano Letters, 2013, 13 (10), pp.4827-4832. ⟨10.1021/nl402544n⟩. ⟨hal-01273660⟩