A 60GHz Highly Reliable Power Amplifier with 13dBm Psat 15% Peak PAE in 65nm CMOS Technology

Boris Moret (1) , Nathalie Deltimple (1) , Eric Kerherve (1) , Aurélien Larie (1) , B. Martineau (2) , Didier Belot (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 STMicroelectronics
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

A 60 GHz highly reliable single-ended two-stage Power Amplifier (PA) is fabricated for the Wireless Personal Area Network (WPAN) applications. The PA consists of a cascode power stage to reduce voltage drop and improving long-term reliability, and a common source driver stage. Output, inter-stage and input impedance matching networks are implemented with distributed elements (microstrip and slow-wave transmission lines). The PA achieves a saturated output power (Psat) of 13dBm and a maximum Power Added Efficiency (PAEmax) of 15% with 13dB gain. It consumes only 84mW and occupies 0.4mm² of die area.

Domaines: Electronique

Boris Moret, Nathalie Deltimple, Eric Kerherve, Aurélien Larie, B. Martineau, et al.. A 60GHz Highly Reliable Power Amplifier with 13dBm Psat 15% Peak PAE in 65nm CMOS Technology. Radio & Wireless Week 2015 / SiRF, Jan 2015, San Diego, United States. pp.3. ⟨hal-01265470⟩