Smart Driver: Communicating gate driver for SiC MOSFET

Abstract : Today, the communication between the primary and secondary sides of most industrial gate drivers is limited to pulses gate control and an error flag. When an error occurs, from Vds monitoring or power supply supervision for example, no information is provided about the origin of the problem. In this paper, we propose a solution that allows exchanging information (like the details of the errors, measurement of some key parameters or configuration data) between the primary and the secondary sides of the gate driver. The communication protocol is CAN High Speed. Theoretical studies and prototype results are shown.
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https://hal.archives-ouvertes.fr/hal-01259251
Contributor : Sandrine Charlier <>
Submitted on : Wednesday, January 20, 2016 - 10:48:24 AM
Last modification on : Friday, November 16, 2018 - 1:25:02 AM

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  • HAL Id : hal-01259251, version 1

Citation

Christophe Bouguet, Nicolas Ginot, Christophe Batard. Smart Driver: Communicating gate driver for SiC MOSFET. International Exhibition and Conference for Power Electroncis, Intelligent Motion, Renewable Energy and Energy Management, May 2016, Nuremberg, Germany. ⟨hal-01259251⟩

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