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Communication Dans Un Congrès Année : 2015

Smart Driver: Communicating gate driver for SiC MOSFET

Résumé

Today, the communication between the primary and secondary sides of most industrial gate drivers is limited to pulses gate control and an error flag. When an error occurs, from Vds monitoring or power supply supervision for example, no information is provided about the origin of the problem. In this paper, we propose a solution that allows exchanging information (like the details of the errors, measurement of some key parameters or configuration data) between the primary and the secondary sides of the gate driver. The communication protocol is CAN High Speed. Theoretical studies and prototype results are shown.
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Dates et versions

hal-01259251 , version 1 (20-01-2016)

Identifiants

  • HAL Id : hal-01259251 , version 1

Citer

Christophe Bouguet, Nicolas Ginot, Christophe Batard. Smart Driver: Communicating gate driver for SiC MOSFET. International Exhibition and Conference for Power Electroncis, Intelligent Motion, Renewable Energy and Energy Management, May 2016, Nuremberg, Germany. ⟨hal-01259251⟩
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