Unforeseen properties of MnAs epilayers grown on GaAs semiconductor

B. Rache Salles , Franck Vidal (1) , Victor H. Etgens (1) , R. Breitwieser , Massimiliano Marangolo (1) , Mahmoud Eddrief (1)

1 INSP - Institut des Nanosciences de Paris

This paper reviews some recent works performed on MnAs/GaAs thin films and other related structures grown by molecular beam epitaxy. The impact of epitaxy on the magneto-structural properties of MnAs and possible applications of MnAs epilayers are discussed. A brief account of recent results obtained on the magneto-trans port in MnAs/GaAs/MnAs magnetic tunnel junctions is also given, highlighting several appealing and promising properties of this system for spintronics applications. (C) 2009 Elsevier B.V. All rights reserved.

Mots clés: MnAs; Molecular beam epitaxy; Magneto-structural phase transition; Spintronics

Domaines: Matière Condensée [cond-mat]

B. Rache Salles, Franck Vidal, Victor H. Etgens, R. Breitwieser, Massimiliano Marangolo, et al.. Unforeseen properties of MnAs epilayers grown on GaAs semiconductor. Physica B: Condensed Matter, 2009, 404 (18), pp.2684-2688. ⟨10.1016/j.physb.2009.06.069⟩. ⟨hal-01240970⟩