Electronic properties of embedded MnAs nano-clusters in a GaAs matrix and (Ga,Mn)As films: Evidence of distinct metallic character

B. Rache Salles , J. C. Girard , C. David , F. Offi , F. Borgatti , Mahmoud Eddrief (1) , Victor H. Etgens (1) , L. Simonelli , Massimiliano Marangolo (1) , G. Panaccione

1 INSP - Institut des Nanosciences de Paris

We investigated the electronic properties of MnAs nano-clusters embedded in GaAs by bulk sensitive photoemission spectroscopy and cross-sectional scanning tunneling microscopy/spectroscopy. We report experimental evidences that the clusters are metallic MnAs, in close resemblance to MnAs thin films, and display a sharp interface with the surrounding GaAs. These results are supported by the comparison with GaMnAs and MnAs film in the same experimental condition. Furthermore, we observe a clear Coulomb blockade effect, as due to confinement and their nanometric size. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704778]

Domaines: Matière Condensée [cond-mat]

B. Rache Salles, J. C. Girard, C. David, F. Offi, F. Borgatti, et al.. Electronic properties of embedded MnAs nano-clusters in a GaAs matrix and (Ga,Mn)As films: Evidence of distinct metallic character. Applied Physics Letters, 2012, 100 (20), pp.203121. ⟨10.1063/1.4704778⟩. ⟨hal-01240935⟩