Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

Abdelkarim Ouerghi , Mathieu G. Silly , Massimiliano Marangolo (1) , Claire Mathieu , Mahmoud Eddrief (1) , Matthieu Picher , Fausto Sirotti , Souliman El Moussaoui , Rachid Belkhou

1 INSP - Institut des Nanosciences de Paris

The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.

Mots clés: epitaxial graphene; spectroscopy; vicinal SiC; scanning tunneling microscopy; low-energy electron microscopy; electronic properties

Domaines: Matière Condensée [cond-mat]

Abdelkarim Ouerghi, Mathieu G. Silly, Massimiliano Marangolo, Claire Mathieu, Mahmoud Eddrief, et al.. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers. ACS Nano, 2012, 6 (7), pp.6075-6082. ⟨10.1021/nn301152p⟩. ⟨hal-01240933⟩