Hybrid III–V/Silicon Nanowires

Moïra Hocevar (1) , Sonia Conesa-Boj (2) , Erik P.A.M. Bakkers (2, 3)

1 NEEL - NPSC - Nanophysique et Semiconducteurs
2 TU/e - Eindhoven University of Technology [Eindhoven]
3 KI-NANO - Kavli Institute of Nanosciences [Delft]

Semiconducting nanowires are emerging as a route to combine heavily mismatched materials. The nanowire dimensions facilitate the defect-free integration of the two most powerful semiconductor classes, group IVs and group III-Vs. These combinations may enhance the performance of existing device concepts, and also create new applications. In this chapter we review the recent progress in heteroepitaxial growth of III-V andIVmaterials. We highlight the advantage of using the small nanowire dimensions to facilitate accommodation of the lattice strain at the surface of the structures. Another advantage of the nanowire system is that anti phase boundaries are not formed, as there is only one nucleation site per wire. In this chapter, we will discuss three different heteroepitaxial III-V/Si morphologies, III-V nanowires on group IV substrates, and axial and radial heterojunctions. Advanced analysis techniques are used tocharacterise the quality of the heterointerfaces. Finally, we address potential applications of III-V/Si nanowires.

Domaines: Matériaux

Moïra Hocevar, Sonia Conesa-Boj, Erik P.A.M. Bakkers. Hybrid III–V/Silicon Nanowires. Semiconductors and Semimetals, 93, pp.231-248, 2015, Semiconductors and Semimetals, ⟨10.1016/bs.semsem.2015.07.006⟩. ⟨hal-01239742⟩