Optical characterization of SiO2/Zn2SiO4:V nanocomposite obtained after the incorporation of ZnO:V nanoparticles in silica host matrix

J. El Ghoul , Carlos Barthou (1) , M. Saadoun , L. El Mir

1 INSP - Institut des Nanosciences de Paris

Vanadium-doped Zn2SiO4 particles embedded in silica host matrix were prepared by a simple solid-phase reaction under natural atmosphere at 1200 degrees C after the incorporation of ZnO:V nanoparticles in silica monolith using 501 gel method with supercritical drying of ethyl alcohol in two steps. The obtained sample, exhibits a strong PL band in the visible range at 540 nm and two thin emission lines in the UV range at 394 and 396 nm under intensive power excitation. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. It is suggested that radiative defects attributed to vanadium in the interfaces between Zn2SiO4 particles and SiO2 host matrix resulting from heat treatment and zinc oxide excitonic emissions, were responsible for theses luminescence bands. (C) 2009 Elsevier Ltd. All rights reserved.

Domaines: Matière Condensée [cond-mat]

J. El Ghoul, Carlos Barthou, M. Saadoun, L. El Mir. Optical characterization of SiO2/Zn2SiO4:V nanocomposite obtained after the incorporation of ZnO:V nanoparticles in silica host matrix. Journal of Physics and Chemistry of Solids, 2010, 71 (3), pp.194-198. ⟨10.1016/j.jpcs.2009.11.003⟩. ⟨hal-01236815⟩