Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon

Hakim Arezki (1) , Mohamed Boutchich (1) , David Alamarguy (1) , Fethullah Gunes (1) , Ali Madouri (2) , J Alvarez (1) , Pere Roca I. Cabarrocas (3) , Jean-Paul Kleider (1) , Fei Yao (4) , Young Hee Lee (5)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 LPN - Laboratoire de photonique et de nanostructures
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
4 Center for Integrated Nanostructure Physics, Institute for Basic Science
5 Department of Energy Science

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique; Energie électrique; Optique / photonique; Matériaux

Hakim Arezki, Mohamed Boutchich, David Alamarguy, Fethullah Gunes, Ali Madouri, et al.. Electronic properties of CVD Graphene capped with p and n-type doped amorphous silicon. 26th International Conference on Amorphous and nanocrystalline Semiconductors (ICANS 26), Sep 2015, Aachen, Germany. ⟨hal-01232115⟩