Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer

H. Riahi (1) , W. Ouerghui (1) , L. Thevenard (2) , Catherine Gourdon (2) , M.A. Maaref (3) , A. Lemaître (4) , O. Mauguin (4) , Christophe Testelin (3, 2)

1 Unité de Recherche de Physique des Semi-conducteurs et Capteurs
2 INSP-E1 - Nanostructures et systèmes quantiques
3 INSP - Institut des Nanosciences de Paris
4 LPN - Laboratoire de photonique et de nanostructures

Vibrating Sample Magnetometer measurements were performed on a ferromagnetic (Ga,Mn)As thin film. We report Curie temperature (T-c) up to 142 K in an annealed 200 nm GaMnAs layer. This result is remarkable and comparable with the T-c obtained in GaMnAs for small thicknesses t < 50 nm. Our result reveals the high quality of the sample albeit the presence of 3 different chemical species, and a large thickness. After comparison with previous work obtained in GaMnAs, we show that for film of up to t=200 nm the out diffusion based annealing process is not thickness limited.

Mots clés: Carrier density and Curie temperature; GaMnAs; Annealing

Domaines: Matière Condensée [cond-mat]

H. Riahi, W. Ouerghui, L. Thevenard, Catherine Gourdon, M.A. Maaref, et al.. Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer. Journal of Magnetism and Magnetic Materials, 2013, 342, pp.149-151. ⟨10.1016/j.jmmm.2013.04.034⟩. ⟨hal-01229172⟩