Micro-Raman study of GaAs nanowires

Wang Peng (1) , Fauzia Jabeen (2) , J. C. Harmand (2) , Bernard Jusserand (1)

1 INSP - Institut des Nanosciences de Paris
2 LPN - Laboratoire de photonique et de nanostructures

In GaAs nanowires, the effective Raman tensor is dominated by dielectric anisotropy leading to similar angular variations of allowed TO and forbidden LO phonon scattering from both zinc blende and wurtzite crystalline symmetry. Resonant Raman scattering studies give evidence of a novel excitonic transition in wurtzite wires at 90 meV above to the lowest exciton in zinc blende ones in agreement with recent theoretical predictions.

Mots clés: Raman scattering; nanowires; GaAs; wurtzite; phonons; excitons; dielectric anisotropy

Domaines: Matière Condensée [cond-mat]

Wang Peng, Fauzia Jabeen, J. C. Harmand, Bernard Jusserand. Micro-Raman study of GaAs nanowires. PHYSICS OF SEMICONDUCTORS, 2013, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA, Unknown Region. pp.492-493, ⟨10.1063/1.4848500⟩. ⟨hal-01229159⟩