Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

Pamela del Vecchio (1) , Arnaud Curutchet (2) , Yannick Deshayes (2) , Mauro Bettiati (1) , François Laruelle (1) , Nathalie Labat (2) , Laurent Béchou (2)

1 3S Photonics
2 IMS - Laboratoire de l'intégration, du matériau au système

Highlights • We observe atypical laser diode (LD) signatures in reverse I-V measurement identified as microplasma discharges. • Correlation between reverse I-V signatures and LFN measurements appears as a complementary tool for improvement of screening methodology for LD. • Reverse and forward noise spectra especially exhibit 1/f noise. • Some lasers reveal g-r noise component in bias voltages corresponding to reverse I-V slope changes and around ITH. • Presence of g-r noise leads to believe that point defect can be localized near the active zone.

Domaines: Sciences de l'ingénieur [physics]; Physique [physics]

Pamela del Vecchio, Arnaud Curutchet, Yannick Deshayes, Mauro Bettiati, François Laruelle, et al.. Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes. Microelectronics Reliability, 2015, 55 (9-10), pp.1741-1745. ⟨10.1016/j.microrel.2015.06.041⟩. ⟨hal-01214031⟩