Low frequency noise spectroscopy in rotated UTBOX nMOSFETs
Résumé
The low frequency noise measurements as a
function of temperature are used as a non-destructive device
characterization tool in order to evaluate the quality of the silicon
film and to identify traps induced during the device processing in
standard <100> and rotated <110> UTBOX n-type transistors.
By comparing two methods, one to estimate the volume trap
density and another to estimate the effective trap density of the
identified traps in the Si film, it was found that the correction
factor B is lower than the theoretically predicted one for
conventional planar single gate transistors.