Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etching through perforated polymer thin films

Alexane Vital (1, 2) , Mohamed Boufnichel (3) , Remi Dussart (1) , Nicolas Gosset (1) , Philippe Lefaucheux (1) , Christophe Sinturel (2) , Thomas Tillocher (1) , Marylène Vayer (2)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 CRMD - Centre de Recherche sur la Matière Divisée
3 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Physique des plasmas [physics.plasm-ph]

Alexane Vital, Mohamed Boufnichel, Remi Dussart, Nicolas Gosset, Philippe Lefaucheux, et al.. Submicronic etched features of silicon with high aspect ratio obtained by cryogenic plasma deep-etching through perforated polymer thin films. 2015 MRS Spring Meeting & Exhibit, Apr 2015, San francisco, United States. ⟨hal-01151542⟩