Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layers

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https://hal.archives-ouvertes.fr/hal-01147506
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Submitted on : Thursday, April 30, 2015 - 3:34:47 PM
Last modification on : Friday, July 19, 2019 - 10:30:06 AM

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  • HAL Id : hal-01147506, version 1

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Ronan Tremblay, Yong Huang, Jean-Philippe Gauthier, Rozenn Piron, Alexandre Beck, et al.. Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layers. Compound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States. ⟨hal-01147506⟩

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