Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport

V. E. Sandana (1, 2) , D. J. Rogers (2) , F. Hosseini Teherani (2) , C. Bayram (3) , M. Razeghi (3) , H.-J. Drouhin (1) , M.C. Clochard (1) , V. Sallet (4) , G. Garry (5)

1 LSI - Laboratoire des Solides Irradiés - Irradiated Solids Laboratory
2 Nanovation - Nanovation SARL
3 CQD - Center for Quantum Devices [Evanston]
4 GEMAC - Groupe d'Etude de la Matière Condensée
5 Thales Research and Technology [Palaiseau]

This article compares the forms and properties of ZnO nanostructures grown on Si(111) and c-plane sapphire (c-Al(2)O(3)) substrates using three different growth processes: metal organic chemical vapor deposition (MOCVD), pulsed laser deposition (PLD), and physical vapor transport (PVT). A very wide range of ZnO nanostructures was observed, including nanorods, nanoneedles, nanocombs, and some novel structures resembelling "bevelled" nanowires. PVT gave the widest family of nanostructures. PLD gave dense regular arrays of nanorods with a preferred orientation perpendicular to the substrate plane on both Si and c-Al(2)O(3) substrates, without the use of a catalyst. X-ray diffraction (XRD) studies confirmed that nanostructures grown by PLD were better crystallized and more highly oriented than those grown by PVT and MOCVD. Samples grown on Si showed relatively poor XRD response but lower wavelength emission and narrower linewidths in PL studies.

Domaines: Polymères

V. E. Sandana, D. J. Rogers, F. Hosseini Teherani, C. Bayram, M. Razeghi, et al.. Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (3), pp.1678-1683. ⟨10.1116/1.3137990⟩. ⟨hal-01144828⟩