Effect of rapid thermal annealing on Nd-SiO x thin film properties

Chuan Hui Liang (1) , Julien Cardin (1) , Larysa Khomenkova (1) , Fabrice Gourbilleau (1)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

The series of Nd 3+-doped Si-rich SiO 2 thin films with different excess Si content were deposited by magnetron co-sputtering of three different (SiO 2 , Si and Nd 2 O 3) targets under a plasma of pure argon at 500 ºC. The Si excess content in the samples was monitored via a power applied on Si cathode. The films were submitted to the rapid thermal annealing (RTA) at 900, 1000 and 1100 ºC, respectively. It was observed a phase separation and a formation of Si nanoclusters embedded in oxide host. The Si excess, remaining after a RTA-1100 ºC annealing, was found to be negligible, confirmed nearly complete phase separation. The Nd 3+ photoluminescence (PL) property was explored as a function of Si excess and/or annealing temperature. The most efficient Nd 3+ PL emission was found for the samples with about 4.7% of Si excess. These optimal samples, submitted to RTA-900 ºC-1 min treatment and conventional annealing at 900°C for 1 h in nitrogen flow, demonstrated comparable Nd 3+ PL intensities. This offers future application of RTA treatment to achieve an efficient emission from the materials doped with rare-earth ions.

Mots clés: Si-rich SiO 2; neodymium; photoluminescence; rapid thermal annealing

Domaines: Matière Condensée [cond-mat]; Matériaux; Micro et nanotechnologies/Microélectronique; Optique / photonique

Chuan Hui Liang, Julien Cardin, Larysa Khomenkova, Fabrice Gourbilleau. Effect of rapid thermal annealing on Nd-SiO x thin film properties. Conference: SPIE Photonics Europe, Apr 2012, Brussels, Belgium. ⟨10.1117/12.922349⟩. ⟨hal-01139857⟩