Growth and electrical properties of N,N[sup ʹ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin films

Matthieu Petit (1, 2) , Ryoma Hayakawa (2) , Yasuhiro Shirai (2) , Yutaka Wakayama (2) , Jonathan P. Hill (3) , Katsuhiko Ariga (3) , Toyohiro Chikyow (2)

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 Advanced Electronic Materials Center [NIMS]
3 Supermolecules Group, NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan

A n-type semiconductor molecule N,N′-bis(n-pentyl)terrylene-3,4:11,12-tetracarboximide (TTCDI-5C) was synthesized. Theoretical calculations predict several advantages in electrical properties, including large adiabatic electron affinity and small reorganization energy. The molecule was deposited on SiO2surfaces and the structure of the resultant thin film was studied. Grain size and thin film crystallinity improve as the temperature increases. Top-contact organic field effect transistors (OFETs) using TTCDI-5C as the semiconductor layer were fabricated using SiO2 as the gate dielectric. Values of charge carrier mobility up to 7.24×10−2cm2V−1s−1 and current on/off ratios higher than 104 were obtained, demonstrating the potential of TTCD-5C for use in OFETs.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Matthieu Petit, Ryoma Hayakawa, Yasuhiro Shirai, Yutaka Wakayama, Jonathan P. Hill, et al.. Growth and electrical properties of N,N[sup ʹ]-bis(n-pentyl)terrylene- 3,4:11,12-tetracarboximide thin films. Applied Physics Letters, 2008, 92 (16), pp.163301. ⟨10.1063/1.2907689⟩. ⟨hal-01122616⟩