Early Stage of Growth of a Perylene Diimide Derivative Thin Film Growth on Various Si(001) Substrates

Matthieu Petit (1, 2) , Ryoma Hayakawa (2) , Yutaka Wakayama (2) , Toyohiro Chikyo (2)

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 Advanced Electronic Materials Center [NIMS]

This study deals with the growth mode of N,N’-dipenthyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-5C) thin films from less than one monolayer to 23 monolayers thick. The effects of growth temperature and the thickness and nature of the substrates —SiO 2 on Si(001) or octadecyltrichlorosilane (OTS) self-assembled monolayer terminated Si(001) surfaces— are discussed. Thin films were deposited from a home-made Knudsen cell by using a hot-wall deposition technique. Films were analyzed by atomic force microscopy, X-ray diffraction, and X-ray reflectivity. Films exhibited a (001) orientation with a 1.63 nm d spacing, and a metastable thin film phase was observed without any distinction of the nature of the substrate. However, differences were noticed in the early stages of growth: PTCDI-5C/SiO 2 first monolayers presented a Stranski- Krastanov growth mode, whereas PTCDI-5C/OTS first monolayers showed a more complex mode with incomplete wetting of the substrate surface. Differences between the two morphologies softened as the film thickness increased.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Toyohiro Chikyo. Early Stage of Growth of a Perylene Diimide Derivative Thin Film Growth on Various Si(001) Substrates. Journal of Physical Chemistry A, 2007, 111 (34), pp.12747-12751. ⟨10.1021/jp071876w⟩. ⟨hal-01122592⟩