Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability

Florian Chevalier (1) , Pierre Brosselard (1) , Dominique Planson (1) , Pascal Bevilacqua (1) , Grégory Grosset (2) , Lionel Dupuy (2)

1 EE - Ampère, Département Energie Electrique
2 Société IBS

Based upon the characterization of two types of 4H-SiC JBS diodes compared to SiC Shottky diode, this paper prensents the influence of the p + activation and well-contacting on the electrical characteristics in forward and reverse mode. The papers will mainly focus on the forward current level, lower without p + activation than with a fully efficient p + layer, compared to state-of-the-art devices. The reverse leakage current is also determining, since it will be higher if there is only a Schottky barrier to protect the blocking mode. After discussing the static results, dynamic mea-surements will be performed to confirm the non-activation of some p + and analyzing its influence on switching mode. Finally, a dsetructive measurement of the surge current of each diode will complete the study.

Mots clés: Schottky diodes; Silicon carbide; Power devices; JBS diodes; High voltage; High integration level; Edge termination; Buck converter

Domaines: Electronique; Micro et nanotechnologies/Microélectronique

Florian Chevalier, Pierre Brosselard, Dominique Planson, Pascal Bevilacqua, Grégory Grosset, et al.. Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability. 2013. ⟨hal-01113182⟩