Spiral step dissociation on PVT grown SiC crystals - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2014

Spiral step dissociation on PVT grown SiC crystals

Résumé

Under specific and reproducible conditions we observed that the top bilayer of a spiral step can detach from the remaining bunched step. This dissociated bilayer is located in the middle of a terrace. In this work we detail the parameters for which the spiral step dissociation appears. Furthermore the possible origins of this effect and the reasons why the dissociated step is located in the center of a terrace are discussed.

Domaines

Matériaux
Fichier non déposé

Dates et versions

hal-01067413 , version 1 (23-09-2014)

Identifiants

Citer

Martin Seiss, Thierry Ouisse, Didier Chaussende. Spiral step dissociation on PVT grown SiC crystals. Materials Science Forum, 2014, Vols. 778-780, pp.39-42. ⟨10.4028/www.scientific.net/MSF.778-780.39⟩. ⟨hal-01067413⟩
179 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More