Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

P. K. Kandaswamy (1) , H.; Machhadani , Y. Kotsar , S Sakr , A. Das (1) , M. Tchernycheva (2) , L. Rapenne (3) , E. Sarigiannidou (3) , F. H. Julien (2) , E. Monroy (4)

1 NPSC - Nanophysique et Semiconducteurs
2 IEF - Institut d'électronique fondamentale
3 LMGP - Laboratoire des matériaux et du génie physique
4 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures

We report on the effect of Si doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices. For increasing doping levels, interband luminescence displays a blueshift and a broadening of the band edge caused by the screening of the internal electric field and band-filling effects. The intersubband absorption energy is mainly governed by many-body effects like exchange interaction and depolarization shift, which increase the e(1)-e(2) subband separation. The ISB blueshift induced by many-body effects can be more than 50% of the e(1)-e(2) transition energy.

Domaines: Matériaux

P. K. Kandaswamy, H.; Machhadani, Y. Kotsar, S Sakr, A. Das, et al.. Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates. Applied Physics Letters, 2010, 96 (14), pp.141903. ⟨10.1063/1.3379300⟩. ⟨hal-01067374⟩