Electron scattering mechanisms in fluorine-doped SnO2 thin films

Germain Rey (1) , Céline Ternon (2) , Mircea Modreanu (3) , Xavier Mescot (4) , Vincent Consonni (1) , Daniel Bellet (1)

1 LMGP - Laboratoire des matériaux et du génie physique
2 LTM - Laboratoire des technologies de la microélectronique
3 Tyndall National Institute [Cork]
4 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Polycrystalline fluorine-doped SnO2 (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 center dot 10(-4)Omega cm (square sheet resistance of 8 Omega/square) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained. (c) 2013 AIP Publishing LLC.

Domaines: Matériaux

Germain Rey, Céline Ternon, Mircea Modreanu, Xavier Mescot, Vincent Consonni, et al.. Electron scattering mechanisms in fluorine-doped SnO2 thin films. Journal of Applied Physics, 2013, 114 (18), pp.183713. ⟨10.1063/1.4829672⟩. ⟨hal-01067050⟩