Laser-induced forward transfer of multi-layered structures for OTFT applications

Abstract : We report on the one-step laser printing of multi-layered org.-based field effect transistors, using thin films of bis(2-phenylethynyl) end-substituted terthiophene (diPhAc-3 T) as semiconductor, parylene-C (Py-C) as dielec. and silver (Ag) as gate electrode, resp. The laser-induced forward transfer (LIFT) process was used to transfer pixels from donor to receiver substrates. The latter included pre-designed source and drain gold electrodes to form complete org. thin films transistors (OTFTs). Such laser-induced forward transfer used a single 50 ps duration pulse delivered by a Nd:YAG laser operating at 355 nm to print transistor pixel arrays under ambient temp. The pixels (350 μm sized-squares, and 700 ± 40 nm in thickness), fabricated in the top gate configuration, were investigated for their current-voltage characteristics immediately after printing. Elec. characterization demonstrated that the laser printed transistor is fully functional with hole mobilities of 4 × 10-4 cm2/V s, a threshold voltage Vt near -10 V, Ion/Ioff ratio near to 104-105 and the sub-threshold slope (S) of 14-18 V/decade. The efficient cohesion between the three different layers composing the pixels offers an exceptionally high strength to laser printing, while maintaining the elec. properties.
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Submitted on : Thursday, September 18, 2014 - 3:39:11 PM
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Catalin Constantinescu, A. K. Diallo, L. Rapp, P. Cremilieu, R. Mazurczyk, et al.. Laser-induced forward transfer of multi-layered structures for OTFT applications. Applied Surface Science, Elsevier, 2014, xx, ⟨10.1016/j.apsusc.2014.06.155⟩. ⟨hal-01065820⟩



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