Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

Abstract : In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase.
Complete list of metadatas

Cited literature [20 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01023271
Contributor : Gabriel Ferro <>
Submitted on : Friday, July 11, 2014 - 5:13:07 PM
Last modification on : Tuesday, November 19, 2019 - 2:43:48 AM
Long-term archiving on: Saturday, October 11, 2014 - 1:10:37 PM

File

Alassaad_et_al2.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

Kassem Alassaad, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, et al.. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.. Acta Materialia, Elsevier, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩. ⟨hal-01023271⟩

Share

Metrics

Record views

318

Files downloads

240