Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny (1, 2, 3) , D. Rideau (2) , F. Triozon (3) , Yann-Michel Niquet (4) , F.G. Pereira (2, 3) , A. Soussou (2) , I. Duchemin (4) , D. Garetto (5) , C. Tavernier (2) , H. Jaouen (2) , Christophe Delerue (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 LSIM - Laboratory of Atomistic Simulation
5 Synopsis France

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that the choice of dielectric constant (ie. static or dynamic) in image force correction can impact the sign of the correction in case of high- dielectric on In0.53Ga0.47As channel material. In addition, gate leakage current in two realistic CMOS devices is calculated by NEGF solver and the influence of image energy on tunnel transmission is discussed. Image energy is shown to increase leakage current at high gate voltage, because of barrier lowering effect ; while decreasing it at low Vg because of barrier width increase.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, et al.. Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩