Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

H. Mosbahi (1) , M. Charfeddine (1) , M. Gassoumi (1) , H. Mejri (2) , Christophe Gaquière (3) , Bertrand Grimbert (3) , M.A. Zaidi (1) , H. Maaref (1)

1 Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
2 EμE - Laboratoire d'Electronique et de Microélectronique [Monastir]
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft) and maximum power gain (fmax) was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements. Copyright © 2014 IFSA Publishing, S. L.

H. Mosbahi, M. Charfeddine, M. Gassoumi, H. Mejri, Christophe Gaquière, et al.. Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs. Sensors & Transducers., 2014, 27, pp.277-279. ⟨hal-01005128⟩