Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

Bogdan Cretu (1) , Eddy Simoen (2) , Jean-Marc Routoure (1) , Régis Carin (1) , M. Aoulaiche (3) , C. Claeys (3, 4)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 IMEC
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency noise versus the temperature allows to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps.

Mots clés: UTBOX; thin silicon film; low frequency noise; carrier number fluctuation noise; Lorentzian noise

Domaines: Sciences de l'ingénieur [physics]; Electronique

Bogdan Cretu, Eddy Simoen, Jean-Marc Routoure, Régis Carin, M. Aoulaiche, et al.. Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film. The International Conference on Noise and Fluctuations (ICNF), 2013, Montpellier, France. 4 p. ⟨hal-00994170⟩